| PART |
Description |
Maker |
| CXD8893J |
C-MOS (32 x 32 x 1)-BIT DIGITAL CROSSPOINT
|
ETC
|
| UPD6300C |
MOS DIGITAL INTEGRATED CIRCUIT
|
NEC
|
| TC58DVM92A1FT00 TC58DVM92A1FT |
Flash - NAND
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| MN6220 MN6094 MN6095 MN6096 MN6200 MN6201 |
DIGITAL MONOLITHIC INTEGRATED CIRCUITS(MOS)
|
Panasonic Semiconductor
|
| TC59LM913AMB-50 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
Toshiba Semiconductor
|
| TC55V2325FF TC55V2325FF-100 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC59RM718MB |
(TC59RM716MB/RB / TC59RM718MB/RB) MOS Digital Integrated Circuit Silicon Monolithic
|
Toshiba Semiconductor
|
| TC55VEM316AXBN55 TC55VEM316AXBN TC55VEM316AXBN40 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC58NVG1S8BFT00 TC58NVG1S3BFT00 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TH58100FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| M68701M |
Silicon MOS FET Power Amplifier, 860-915MHz 6W FM / Digital Mobile
From old datasheet system
|
Mitsubishi Electric Corporation
|
